Journal article
Improved Placement Precision of Donor Spin Qubits in Silicon using Molecule Ion Implantation
D Holmes, B Wilhelm, AM Jakob, X Yu, FE Hudson, KM Itoh, AS Dzurak, DN Jamieson, A Morello
Advanced Quantum Technologies | Wiley | Published : 2024
Abstract
Donor spins in silicon-28 are among the best performing qubits in the solid state, offering unmatched coherence times, gate fidelities beyond 99% and the ability to fabricate arrays using deterministic ion implantation. Donor placement precision is improved upon, advantageous for qubit readout and coupling, by implanting molecule ions that carry bystander atoms to boost the detection confidence. Here, the suitability of phosphorus difluoride ((Formula presented.)) molecule ions is demonstrated to fabricate (Formula presented.) donor qubits. Using secondary ion mass spectrometry, it is confirmed that (Formula presented.) (nuclear spin (Formula presented.)) diffuses away from the implant site ..
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Grants
Awarded by Army Research Office
Funding Acknowledgements
This research was funded by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (CE170100012) and the US Army Research Office (Contracts no. W911NF-17-1-0200 and W911NF-23-1-0113). The authors acknowledged the facilities, and the scientific and technical assistance provided by the UNSW node of the Australian National Fabrication Facility (ANFF), and the Heavy Ion Accelerators (HIA) nodes at the University of Melbourne. ANFF and HIA are supported by the Australian Government through the National Collaborative Research Infrastructure Strategy (NCRIS) program. The authors acknowledged support from the Surface Analysis Laboratory, SSEAU, MWAC, UNSW for SIMS and the support of the International Atomic Energy Agency through the Cooperative Research Program number F11020 "Ion beam induced spatio-temporal structural evolution of materials: Accelerators for a new technology era". The authors thank Matthias Posselt for providing a modified version of his Crystal-TRIM code that was used to support ion implantation simulations. B.W. and X.Y. acknowledged support from the Sydney Quantum Academy. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the Army Research Office or the U.S. Government. The U.S. Government is authorized to reproduce and distribute reprints for Government purposes notwithstanding any copyright notation herein.